PART |
Description |
Maker |
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
MCM69R737AZP7 MCM69R737AZP6R MCM69R737AZP5R MCM69R |
From old datasheet system 4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
GS8150V18AB-250 GS8150V36AB-250 GS8150V36AGB-250 G |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
|
GSI Technology, Inc.
|
MCM69L820AZP9R MCM69L738A MCM69L738AZP8.5 MCM69L73 |
4M Late Write 2.5 V I/O
|
MOTOROLA[Motorola, Inc]
|
MCM69R818CZP4.4 MCM69R736CZP4.4 MCM69R736CZP4.4R M |
4M Late Write HSTL
|
Motorola, Inc
|
BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
MCM69R536ZP4.4R |
32K X 36 LATE-WRITE SRAM, 2.2 ns, PBGA119
|
MOTOROLA INC
|
IS61DDB41M36A |
Synchronous pipeline read with late write operation
|
Integrated Silicon Solu...
|
GS8330DW36 GS8330DW36-200 GS8330DW72C GS8330DW36-2 |
36Mb Common I/O SigmaRAMs Double Late Write SigmaRAM
|
ETC GSI[GSI Technology]
|
HM64YGB36100BP-33 HM64YGB36100 |
32M Synchronous Late Write Fast Static RAM (1-Mword 】 36-bit)
|
Renesas Electronics Corporation
|
HM64YLB36512BP-33 HM64YLB36512 HM64YLB36512BP-28 |
16M Synchronous Late Write Fast Static RAM (512-kword 隆驴 36-bit) 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|